View FNB41060_8984465.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

to learn more about on semiconductor, please visit our website at www.onsemi.com please note: as part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductors system requirements. since the on semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the fairchild part numbers will be changed to a dash (-). this document may contain device numbers with an underscore (_). please check the on semiconductor website to verify the updated device numbers. the most current and up-to-date ordering information can be found at www.onsemi.com . please email any questions regarding the system integration to fairchild_questions@onsemi.com . is now part of on semiconductor and the on semiconductor logo are trademarks of semico nductor components industries, llc dba on semiconductor or its subsid iaries in the united states and/or other countries. on semiconductor ow ns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellec tual property. a listing of on semiconductor?s product/patent cover age may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semicon ductor makes no warranty, representation or guarantee regarding the s uitability of its products for any particular purpose, nor does on semico nductor assume any liability arising out of the application or use of any product or circuit, and speci?ca lly disclaims any and all liability, including without limitation spe cial, consequential or incidental damages. buyer is responsible for i ts products and applications using on semiconductor products, including compliance with all laws, regul ations and safety requirements or standards, regardless of any suppor t or applications information provided by on semiconductor. ?typica l? parameters which may be provided in on semiconductor data sheets and/or speci?cations can and do vary in diffe rent applications and actual performance may vary over time. all operat ing parameters, including ?typicals? must be validated for each custo mer application by customer?s technical experts. on semiconductor does not convey any license und er its patent rights nor the rights of others. on semiconductor products a re not designed, intended, or authorized for use as a critical compone nt in life support systems or any fda class 3 medical devices or medical devices with a same or similar classi?ca tion in a foreign jurisdiction or any devices intended for implantation i n the human body. should buyer purchase or use on semiconductor products fo r any such unintended or unauthorized application, buyer shall indemnify and hold on semico nductor and its of?cers, employees, subsidiaries, af?liates, and di stributors harmless against all claims, costs, damages, and expense s, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associa ted with such unintended or unauthorized use, even if such claim alleges th at on semiconductor was negligent regarding the design or manufacture o f the part. on semiconductor is an equal opportunity/af?rmative action employer. this literatu re is subject to all applicable copyright laws and is not for resale in any manne r.
FNB41060 motion sp m? 45 series january 2014 ?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FNB41060 rev. c3 FNB41060 motion spm ? 45 series features ul certified no. e209204 (ul1557) 600 v - 10 a 3-phase igbt inverter with integral gate drivers and protection low thermal resistance using ceramic substrate low-loss, short-circuit rated igbts built-in bootstrap diodes and dedicated vs pins sim- plify pcb layout built-in ntc thermistor for temperature monitoring separate open-emitter pins from low-side igbts for three-phase current sensing single-grounded power supply isolation rating: 2000 v rms / min. applications motion control - home appliance / industrial motor related resources an-9070 - motion spm? 45 series users guide an-9071 - motion spm? 45 series thermal perfor - mance information an-9072 - motion spm? 45 series mounting guid - ance rd-344 - reference design (three shunt solution) rd-345 - reference design (one shunt solution) general description FNB41060 is a motion spm ? 45 module providing a fully-featured, high-performanc e inverter output stage for ac induction, bldc, and pmsm motors. these mod- ules integrate optim ized gate drive of the built-in igbts to minimize emi and losses, while also providing multi- ple on-module protection features including under-volt- age lockouts, over-current shutdown, thermal monitoring, and fault reporti ng. the built-in, high-speed hvic requires only a single supply voltage and trans- lates the incoming logic-level gate inputs to the high-volt- age, high-current drive signals required to properly drive the module's robust short-circuit-rated igbts. separate negative igbt terminals are available for each phase to support the widest variety of control algorithms. package marking and ordering inform ation figure 1. package overview device device marking package packing type quantity FNB41060 FNB41060 spmaa-a26 rail 12
FNB41060 rev. c3 FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com integrated power functions 600 v - 10 a igbt inverter for three-phase dc / ac power conversion (please refer to figure 3) integrated drive, protection, and system control functions for inverter high-side igbts: gate drive circ uit, high-voltage isolated high-speed level shifting control circuit under-voltage lock-out (uvlo) protection for inverter low-side igbts: gate driv e circuit, short-circuit protection (scp) control supply circuit under-vol tage lock-out (uvlo) protection fault signaling: corresponding to uvlo (low-side supply) and sc faults input interface: active-high interface, wor ks with 3.3 / 5 v logic, schmitt trigger input pin configuration figure 2. top view v th (1) r th (2) p(3) u(4) v(5) w(6) n u (7) n v (8) n w (9) v b(u) (26) v s(u) (25) v b(v) (24) v s(v) (23) v b(w) (22) v s(w) (21) in (uh) (20) in (vh) (19) in (wh) (18) v cc(h) (17) com(15) in (ul) (14) in (vl) (13) in (w l) (12) v fo (11) c sc (10) v cc(l) (16) case temperature (t c ) detecting point v th (1) r th (2) p(3) u(4) v(5) w(6) n u (7) n v (8) n w (9) v b(u) (26) v s(u) (25) v b(v) (24) v s(v) (23) v b(w) (22) v s(w) (21) in (uh) (20) in (vh) (19) in (wh) (18) v cc(h) (17) com(15) in (ul) (14) in (vl) (13) in (w l) (12) v fo (11) c sc (10) v cc(l) (16) case temperature (t c ) detecting point
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FNB41060 rev. c3 pin descriptions pin number pin name pin description 1v th thermistor bias voltage 2r th series resistor for the use of thermistor (temperature detection) 3 p positive dc-link input 4 u output for u-phase 5 v output for v-phase 6 w output for w-phase 7n u negative dc-link input for u-phase 8n v negative dc-link input for v-phase 9n w negative dc-link input for w-phase 10 c sc capacitor (low-pass filter) for shor t-circuit current detection input 11 v fo fault output 12 in (wl) signal input for low-side w-phase 13 in (vl) signal input for low-side v-phase 14 in (ul) signal input for low-side u-phase 15 com common supply ground 16 v cc(l) low-side common bias voltage for ic and igbts driving 17 v cc(h) high-side common bias voltage for ic and igbts driving 18 in (wh) signal input for high-side w-phase 19 in (vh) signal input for high-side v-phase 20 in (uh) signal input for high-side u-phase 21 v s(w) high-side bias voltage ground for w-phase igbt driving 22 v b(w) high-side bias voltage for w-phase igbt driving 23 v s(v) high-side bias voltage ground for v-phase igbt driving 24 v b(v) high-side bias voltage for v-phase igbt driving 25 v s(u) high-side bias voltage ground for u-phase igbt driving 26 v b(u) high-side bias voltage for u-phase igbt driving
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FNB41060 rev. c3 internal equivalent circ uit and input/output pins figure 3. internal block diagram 1st notes: 1. inverter high-side is composed of three igbts, freewheeling diodes, and one control ic for each igbt . 2. inverter low-side is composed of three igbts, freewheeling diodes, and one control ic for each igbt. it has gate drive and p rotection functions. 3. inverter power side is composed of four inverter dc-link input terminals and three inverter outp ut terminals. com vcc in(wl) in(vl) in(ul) vfo c(sc) out(wl) out(vl) out(ul) n w (9) n v (8) n u (7) w(6) v (5) u(4) p (3) (25) v s(u) (26) v b(u) (23) v s(v) (24) v b(v) (10) c sc (11) v fo (12) in (wl) (13) in (vl) (14) in (ul) (15) com uvb out(uh) uvs in(uh) wvs wvs out(wh) in(wh) com vcc wvb out(vh) vvs in(vh) v th (1) (19) in (vh) (20) in (uh) (21) v s(w) (22) v b(w) (17) v cc(h) (18) in (wh) r th (2) thermister uvs vvs vvb (16) v cc(l)
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FNB41060 rev. c3 absolute maximum ratings (t j = 25c, unless otherwise specified.) inverter part 2nd notes: 1. sinusoidal pwm at v pn = 300 v, v cc = v bs = 15 v, t j 150 , f sw = 20 khz, mi = 0.9, pf = 0.8 2. the maximum junction temperature rating of the power chips integrated within the motion s pm ? 45 product is 150 ? c. control part bootstrap diode part total system thermal resistance 2nd notes: 3. for the measurement point of case temperature (t c ), please refer to figure 2. symbol parameter conditions rating unit v pn supply voltage applied between p - n u , n v , n w 450 v v pn(surge) supply voltage (surge) applied between p - n u , n v , n w 500 v v ces collector - emitter voltage 600 v i o,25 output phase current t c = 25c, t j 150c (2nd note 1) 10 a i o,100 output phase current t c = 100c , t j 150c (2nd note 1) 5 a i pk output peak phase current t c = 25c, t j 150c, under 1 ms pulse width 15 a p c collector dissipation t c = 25c per chip 32 w t j operating junction temperature (2nd note 2) - 40 ~ 150 c symbol parameter conditions rating unit v cc control supply voltage applied between v cc(h) , v cc(l) - com 20 v v bs high - side control bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 20 v v in input signal voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com -0.3 ~ v cc + 0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc + 0.3 v i fo fault output current sink current at v fo pin 1 ma v sc current-sensing input voltage applied between c sc - com -0.3 ~ v cc + 0.3 v symbol parameter conditions rating unit v rrm maximum repetitive reverse voltage 600 v i f forward current t c = 25c, t j 150c 0.50 a i fp forward current (peak) t c = 25c, t j 150c, under 1 ms pulse width 1.50 a t j operating junction temperature -40 ~ 150 c symbol parameter conditions rating unit v pn(prot) self-protection supply voltage limit (short-circuit protection capability) v cc = v bs = 13.5 ~ 16.5 v t j = 150c, non-repetitive, < 2 ? s 400 v t stg storage temperature -40 ~ 125 c v iso isolation voltage 60 hz, sinusoidal, ac 1 minute, connect pins to heat sink plate 2000 v rms symbol parameter conditions min. typ. max. unit r th(j-c)q junction to case thermal resistance inverter igbt part (per 1 / 6 module) - - 3.8 c / w r th(j-c)f inverter fwdi part (per 1 / 6 module) - - 4.8 c / w
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FNB41060 rev. c3 electrical characteristics (t j = 25c, unless otherwise specified.) inverter part 2nd notes: 4. t on and t off include the propagation delay of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definition symbol parameter conditions min. typ. max. unit v ce(sat) collector - emitter saturation voltage v cc = v bs = 15 v v in = 5 v i c = 5 a, t j = 25c - 1.5 2.0 v v f fwdi forward voltage v in = 0 v i f = 5 a, t j = 25c - 1.5 2.0 v hs t on switching times v pn = 300 v, v cc = v bs = 15 v, i c = 5 a t j = 25c v in = 0 v ? 5 v, inductive load (2nd note 4) 0.45 0.75 1.25 ? s t c(on) -0 . 2 00 . 4 5 ? s t off -0 . 7 01 . 2 0 ? s t c(off) -0 . 1 50 . 4 0 ? s t rr -0 . 1 5- ? s ls t on v pn = 300 v, v cc = v bs = 15 v, i c = 5 a t j = 25c v in = 0 v ? 5 v, inductive load (2nd note 4) 0.35 0.65 1.15 ? s t c(on) -0 . 1 50 . 4 0 ? s t off -0 . 6 51 . 1 5 ? s t c(off) -0 . 1 50 . 4 0 ? s t rr -0 . 1 5- ? s i ces collector - emitter leakage current v ce = v ces --1m a v ce i c v in t on t c(on) v in(on) 10% i c 10% v ce 90% i c 100% i c t rr 100% i c v ce i c v in t off t c(off) v in(off) 10% v ce 10% i c (a) turn-on (b) turn-off
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FNB41060 rev. c3 figure 5. switching loss ch aracteristics (typical) control part 2nd notes: 5. short-circuit protection is functioning only at the low-sides. 6. t th is the temperature of thermister itselt. to know case temperature (t c ), please make the experiment considering your application. symbol parameter conditions min. typ. max. unit i qcch quiescent v cc supply current v cc(h) = 15 v, in (uh,vh,wh) = 0 v v cc(h) - com - - 0.10 ma i qccl v cc(l) = 15 v, in (ul,vl, wl) = 0 v v cc(l) - com - - 2.65 ma i pcch operating v cc supply current v cc(l) = 15 v, f pwm = 20 khz, duty = 50%, applied to one pwm sig- nal input for high-side v cc(h) - com - - 0.15 ma i pccl v cc(l) = 15 v, f pwm = 20 khz, duty = 50%, applied to one pwm sig- nal input for low-side v cc(l) - com - - 3.65 ma i qbs quiescent v bs supply current v bs = 15 v, in (uh, vh, wh) = 0 v v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) - - 0.30 ma i pbs operating v bs supply current v cc = v bs = 15 v, f pwm = 20 khz, duty = 50%, applied to one pwm signal input for high-side v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) - - 2.00 ma v foh fault output voltage v sc = 0 v, v fo circuit: 10 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 10 k ? to 5 v pull-up - - 0.5 v v sc(ref) short-circuit current trip level v cc = 15 v (2nd note 5) 0.45 0.50 0.55 v uv ccd supply circuit under-voltage protection detection level 10.5 - 13.0 v uv ccr reset level 11.0 - 13.5 v uv bsd detection level 10.0 - 12.5 v uv bsr reset level 10.5 - 13.0 v t fod fault-out pulse width 30 - - ? s v in(on) on threshold voltage applied between in (uh) , in (vh) , in (wh) , in (ul) , in (vl) , in (wl) - com --2 . 6v v in(off) off threshold voltage 0.8 - - v r th resistance of thermister @t th = 25c, (2nd note 6) - 47 - k ? @t th = 100c - 2.9 - k ? 012345 0 50 100 150 200 250 300 350 400 inductive load, v pn =300v, v cc =15v, t j =25 igbt turn-on, e on igbt turn-off, e off frd turn-off, e rec switching loss, e sw [uj] collector current, i c [amperes] 012345 0 50 100 150 200 250 300 350 400 inductive load, v pn =300v, v cc =15v, t j =150 igbt turn-on, e on igbt turn-off, e off frd turn-off, e rec switching loss, e sw [uj] collector current, i c [amperes]
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FNB41060 rev. c3 figure. 6. r-t curve of the built-in thermistor bootstrap diode part figure 7. built-in bootstrap diode characteristic 2nd notes: 7. built-in bootstrap diode includes around 15 ? resistance characteristic. symbol parameter conditions min. typ. max. unit v f forward voltage i f = 0.1 a, t c = 25c - 2.5 - v t rr reverse-recovery time i f = 0.1 a, t c = 25c - 80 - ns -20-10 0 102030405060708090100110120 0 50 100 150 200 250 300 350 400 450 500 550 600 r-t curve resistance[k ? ] temperature t th [] 50 60 70 80 90 100 110 120 0 4 8 12 16 20 resistance[k ? ] temperature [ ] r-t curve in 50 ~ 125 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 built-in bootstrap diode v f -i f characteristic t c =25 o c i f [a] v f [v]
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 9 www.fairchildsemi.com FNB41060 rev. c3 recommended oper ating conditions 2nd notes: 8. this product might not make response if input pulse width is less than the recommanded value. figure 8. allowable maximum output current 2nd notes: 9. this allowable output current value is the reference data for the safe operation of this product. this may be different from the actual application and operating condition. symbol parameter conditions min. typ. max. unit v pn supply voltage applied between p - n u , n v , n w - 300 400 v v cc control supply voltage applied between v cc(h) , v cc(l) - com 13.5 15 16.5 v v bs high-side bias voltage applied between v b(u) - v s(u) , v b(v) - v s(v) , v b(w) - v s(w) 13.0 15 18.5 v dv cc / dt, dv bs / dt control supply variation - 1 - 1 v / ? s t dead blanking time for preventing arm-short for each input signal 1.5 - - ? s f pwm pwm input signal - 40 ? c ? t j ? 150c - - 20 khz v sen voltage for current sensing applied between n u , n v , n w - com (including surge-voltage) - 4 4 v p win(on) minimun input pulse width (2nd note 8) 0.5 - - ? s p win(off) 0.5 - - 0 102030405060708090100110120130140 0 1 2 3 4 5 6 7 8 9 10 allowable maximum output current v dc =300v, v cc =v bs =15v t j 150 , t c 125 m.i.=0.9, p.f.=0.8 sinusoidal pwm f sw =15khz f sw =5khz allowable output current, i orms [a rms ] case temperature, t c [ ]
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 10 www.fairchildsemi.com FNB41060 rev. c3 mechanical characteristics and ratings figure 9. flatness measurement position figure 10. mounting screws torque order 2nd notes: 10. do not make over torque when mounting screws. much mounting torque may cause cera mic cracks, as well as bolts and al heat-s ink destruction. 11. avoid one side tightening stress. figure 10 shows the recommended torque order for m ounting screws. uneven mounting can cau se the ceramic substrate of the spm ? 45 package to be damaged. the pre-screwing torque is set to 20 ~ 30% of maximum torque rating. parameter conditions min. typ. max. unit device flatness see figure 9 0 - + 120 ? m mounting torque mounting screw: m3 see figure 10 recommended 0.7 n m 0.6 0.7 0.8 n m recommended 7.1 kg cm 6.2 7.1 8.1 kg cm weight -1 1- g 1 2 pre - screwing : 1 2 final screwing : 2 1 1 2 pre - screwing : 1 2 final screwing : 2 1
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 11 www.fairchildsemi.com FNB41060 rev. c3 time charts of protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operat e when next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under-voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under-voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 11. under-voltage protection (low-side) b1 : control supply voltage rises: after the voltage reaches uv bsr , the circuits start to operate when next input is applied. b2 : normal operation: igbt on and carrying current. b3 : under-voltage detection (uv bsd ). b4 : igbt off in spite of control input c ondition, but there is no fault output signal. b5 : under-voltage reset (uv bsr ). b6 : normal operation: igbt on and carrying current. figure 12. under-voltage protection (high-side) input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7 input signal output current fault output signal control supply voltage reset uv bsr protection circuit state set reset uv bsd b1 b3 b2 b4 b6 b5 high-level (no fault output)
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 12 www.fairchildsemi.com FNB41060 rev. c3 (with the external shunt resistance and cr connection) c1 : normal operation: igbt on and carrying current. c2 : short-circuit current detection (sc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : input low: igbt off state. c6 : input high: igbt on state, but during the ac tive period of fault output, the igbt doesnt turn on. c7 : igbt off state. figure 13. short-circuit protection (low-side operation only) input/output interface circuit figure 14. recommended mcu i/o interface circuit 2nd notes: 12. rc coupling at each input (parts shown dotted) might change depending on the pwm control scheme in t he application and the wiring impedance of the applications printed circuit board. the input signal section of the motion spm ? 45 product integrates a 5 k ?? ( typ.) pull-down resistor. therefore, when using an external filtering resistor, pay atten- tion to the signal voltage drop at input terminal. lower arms control input output current sensing voltage of shunt resistance fault output signal sc reference voltage cr circuit time constant delay sc protection circuit state set reset c6 c7 c3 c2 c1 c8 c4 c5 internal igbt gate - emitter voltage mcu com +5 v (for mcu or control power) ,, in (ul) in (vl) in (wl) ,, in (uh) in (vh) in (wh) v fo r pf = 10 k ? spm
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 13 www.fairchildsemi.com FNB41060 rev. c3 figure 15. typical application circuit 3rd notes: 1) to avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 2) by virtue of integrating an application-specific type of hvic inside the motion spm ? 45 product, direct coupling to mcu terminals without any optocoupler or transformer isola- tion is possible. 3) v fo output is open-drain type. this signal line should be pulled up to the positive side of the mcu or con trol power supply with a resistor that makes i fo up to 1 ma (please refer to figure 14). 4) c sp15 of around seven times larger than bootstrap capacitor c bs is recommended. 5) input signal is active-high type. there is a 5 k ? resistor inside the ic to pull down each input signal line to gnd. rc coupling circuits is re commanded for the prevention of input signal oscillation. r s c ps time constant should be selected in the range 50 ~ 150 ns ( recommended r s = 100 ? , c ps = 1 nf). 6) to prevent errors of the protection function, the wiring around r f and c sc should be as short as possible. 7) in the short-circuit protection circuit, please select the r f c sc time constant in the range 1.5 ~ 2 ? s. 8) the connection between control gnd line and power gnd line which includes the n u , n v , n w must be connected to only one point. please do not connect the control gnd to the power gnd by the broad pattern. also, the wiring distance between control gnd and power gn d should be as short as possib le. 9) each capacitor should be mounted as close to th e pins of the motion spm 45 product as possible. 10) to prevent surge destruction, the wiring between the smoothing capacitor and the p & gnd pins should be as short as possib le. the use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 ? f between the p and gnd pins is recommended. 11) relays are used in almost every systems of electrical equipmen t in home appliances. in these cases, there should be suffic ient distance between the mcu and the relays. 12) the zener diode or transient voltage suppressor should be adopted for the protection of ics from the surge d estruction betw een each pair of control supply terminals (recommanded zener diode is 22 v / 1 w, which has the lower zener impedance characteristic than about 15 ? ). 13) please choose the electrolytic capacitor with good temperature characteristic in c bs . also, choose 0.1 ~ 0.2 ? f r-category ceramic capacitors with good temperature and frequency characteristics in c bsc . 14) for the detailed information, please refer to the an-9070, an-9071, an-9072, rd-344, and rd-345. fault +15 v c bs c bsc c bs c bsc c bs c bsc c sp15 c spc15 r pf c bpf r s m v dc c dcs gating uh gating vh gating wh gating ul gating vl gating wl c pf m cu r sw r sv r su u-phase current v-phase current w-phase current r f com vcc in(wl) in(vl) in(ul) vfo csc out(wl) out(vl) out(ul) n w (9) n v (8) n u (7) w (6) v (5) u (4) p (3) (25) v s(u) (26) v b(u) (23) v s(v) (24) v b(v) (10) c sc (11) v fo (14) in (ul) (13) in (vl) (12) in (wl) (20) in (uh) (19) in (vh) (21) v s(w) (22) v b(w) (17) v cc(h) (18) in (wh) input signal for short-circuit protection c sc r s r s r s r s r s r s c ps c ps c ps c ps c ps c ps in(wh) in(vh) in(uh) com vcc vs(w) vs(v) vs(u) vs(v) vs(u) vs(w) vb(u) vb(v) vb(w) (15) com out(wh) out(vh) out(uh) lvic hvic (1) v th (2) r th r th thermistor temp. monitoring (16) v cc(l) +5 v c spc05 c sp05
FNB41060 motion sp m? 45 series ?2011 fairchild semiconductor corporation 14 www.fairchildsemi.com FNB41060 rev. c3 detailed package outline drawings package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or data on the drawing and contact a fairchildsemiconductor representative to veri fy or obtain the most recent revision. package s pecifications do not expand the terms of fa irchilds worldwide therm and conditions, specifically the the warranty therein, which covers fairchild products. always visit fairchild semiconduct ors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/mo/mod26aa.pdf
?2011 fairchild semiconductor corporation 15 www.fairchildsemi.com FNB41060 rev. c3
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including typic als must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your localsales representative ? semiconductor components industries, llc

▲Up To Search▲

Price & Availability of FNB41060

	To Download FNB41060 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .